Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterization (Adv. Mater. Interfaces 20/2021)
نویسندگان
چکیده
Perovskite MOS Structures In article number 2101004, José M. V. Cunha and co-workers demonstrate that AC measurements performed on metal–oxide–semiconductor devices (MOS) allow for the study of density interface defects fixed oxide charges present in electron transport layer/perovskite interface, allowing development highly-efficient perovskite solar cells, which have several applications, e.g., build-integrated photovoltaics.
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ژورنال
عنوان ژورنال: Advanced Materials Interfaces
سال: 2021
ISSN: ['2196-7350']
DOI: https://doi.org/10.1002/admi.202170113